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October 2013
FDP047AN08A0 / FDH047AN08A0
N-Channel PowerTrench ? MOSFET
75 V, 80 A, 4.7 m Ω
Features
? R DS(ON) = 4.0 m ? (Typ.), V GS = 10 V, I D = 80 A
? Q g (tot) = 92 nC (Typ.), V GS = 10V
? Low Miller Charge
Applications
? Synchronous Rectification for ATX / Server / Telecom PS U
? Battery Protection Circui t
? Motor Drives and Uninterruptible Power Supplie s
? Low Q rr Body Diode
? UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82684
D
GD
S
TO-220
G
D
S
TO-247
G
S
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
C
Symbol
V DSS
V GS
I D
E AS
P D
T J , T STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T C < 144 o C, V GS = 10V)
Continuous (T C = 25 o C, V GS = 10V, with R θ JA = 62 o C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 o C
Operating and Storage Temperature
FDP047AN08A0
FDH047AN08A0
75
± 20
80
15
Figure 4
475
310
2.0
-55 to 175
Unit
V
V
A
A
A
mJ
W
W / o C
o
Thermal Characteristics
C/W
C/W
R θ JC
R θ JA
R θ JA
Thermal Resistance Junction to Case, Max. TO-220, TO-247
Thermal Resistance Junction to Ambient, Max. TO-220 (Note 2)
Thermal Resistance Junction to Ambient, Max. TO-247 (Note 2)
0. 48
62
30
o C/W
o
o
? 2003 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDH047AN08A0 Rev. C2
1
www.fairchildsemi.com
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相关代理商/技术参数
FDP047AN08A0 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
FDP047AN08A0_F102 功能描述:MOSFET SNGL NCH 75V 4.7MOHM ULTRAFET TRENCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDP047AN08A0_G 制造商:Fairchild Semiconductor Corporation 功能描述:75V N-Channel PowerTrenchR MOSFET
FDP047N08 功能描述:MOSFET 75V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDP047N10 功能描述:MOSFET 100V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDP047N10_12 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 100V, 164A, 4.7mW
FDP050AN06A0 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDP050AN06A0_F085 功能描述:MOSFET N-Chan PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube